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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate MOSFET 2N7002M DESCRIPTION High cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. 1. GATE 2. SOURCE 3. DRAIN MOSFET( N-Channel ) D WBFBP-03B (1.2x1.2x0.5) unit: mm TOP G D S BACK S G FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. APPLICATION N-Channel Enhancement Mode Field Effect Transistor For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: 72 D 72 G S MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol VDS ID PD RJA TJ Tstg Drain-Source voltage Drain Current Power Dissipation Thermal Resistance. Junction to Ambient Air Junction Temperature Storage Temperature Parameter Value 60 115 150 625 150 -55-150 Units V mA mW /W ELECTRICAL CHARACTERISTICS(Ta=25 Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage* Gate-body Leakage Zero Gate Voltage Drain Current On-state Drain Current* Drain-Source On-Resistance* Drain-Source On- Voltage * Forward Tran conductance* Diode Forward Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS Vth(GS) lGSS IDSS ID(ON) RDS(0n) VDS(0n) gts VSD Ciss COSS CrSS unless Test otherwise conditions specified) MIN 60 60 1 2.5 100 1 500 500 1.2 1.7 7.5 7.5 3.75 0.375 80 1.2 50 25 5 nA A mA V ms V pF V TYP MAX UNIT VGS=0V,ID=10A VGS=0V,ID=3mA VDS=VGS, ID=250A VDS=0V, VGS=25V VDS=60V, VGS=0V VDS=60V,VGS=0V,Tj=125 VGS=10V, VDS=7V VGS=10V, ID=500mA VGS=5V, ID=50mA VGS=10V, ID=500mA VGS=5V, ID=50mA VDS=10V, ID=200mA IS=115mA, VGS=0V VDS=25V, VGS=0V,f=1MHz * Pulse test , pulse width300s, duty cycle2% . SWITCHING TIME Turn-on Time Turn-off Time td(0n) td(off) VDD=25V,RG=25 ID=500mA,VGEN=10V RL=50 20 40 ns Typical Characteristics 2N7002M Sym bol A A1 b b1 b2 D E D2 E2 e L L1 L2 k z D im e n s io n s In M illim e t e r s M in . M ax. 0 .4 5 0 0 .5 5 0 0 .0 1 0 0 .0 9 0 0 .1 7 0 0 .2 7 0 0 .2 7 0 0 .3 7 0 0 .2 5 0 R E F . 1 .1 5 0 1 .2 5 0 1 .1 5 0 1 .2 5 0 0 .4 7 0 R E F . 0 .8 1 0 R E F . 0 .8 0 0 T Y P . 0 .2 8 0 R E F . 0 .2 3 0 R E F . 0 .1 5 0 R E F . 0 .3 0 0 R E F . 0 .0 9 0 R E F . D im e n s io n s In In c h e s M in . M ax. 0 .0 1 8 0 .0 2 2 0 .0 0 0 0 .0 0 4 0 .0 0 7 0 .0 1 1 0 .0 1 1 0 .0 1 5 0 .0 1 0 R E F . 0 .0 4 5 0 .0 4 9 0 .0 4 5 0 .0 4 9 0 .0 0 2 R E F . 0 .0 3 2 R E F . 0 .0 3 2 T Y P . 0 .0 1 1 R E F . 0 .0 0 9 R E F . 0 .0 0 6 R E F . 0 .0 1 2 R E F . 0 .0 0 4 R E F . |
Price & Availability of 2N7002M
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